20.3dB 0.39mW AM detector with single-transistor active inductor in bendable a-IGZO TFT

Meister, Tilo, Ishida, Koichi, Shabanpour, Reza, Boroujeni, Bahman K, Carta, Corrado, Munzenrieder, Niko, Petti, Luisa, Cantarella, Giuseppe, Salvatore, Giovanni A, Troster, Gerhard and Ellinger, Frank (2016) 20.3dB 0.39mW AM detector with single-transistor active inductor in bendable a-IGZO TFT. Solid-State Device Research Conference. pp. 71-74. ISSN 2378-6558

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Abstract

This paper presents an AM detector circuit in a bendable a-IGZO TFT technology. The circuit is based on a common-source stage loaded with a single-ended active inductor, which uses only one active transistor. This active inductor is the key element for the achieved circuit performance. The detector circuit consumes only 0.39 mW, which is almost a tenfold improvement over previous works in the same technology and crucial for mobile and wearable applications. At the same time it has the smallest chip area. The detector provides a conversion gain of 20.3 dB and an RF -3dB-bandwidth of around 7.5 MHz. At fc=13.56 MHz it has 11.6 dB gain, which also allows its use in this unlicensed ISM radio band for RFID and smart label applications.

Item Type: Article
Additional Information: 46th ESSDERC research conference 12-15 Sep 2016
Keywords: flexible electronics; radio receivers; amplifiers; active inductors; thin film transistors; TFT; amplitude modulation; a-IGZO; InGaZnO
Schools and Departments: School of Engineering and Informatics > Engineering and Design
Research Centres and Groups: Sensor Technology Research Centre
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Depositing User: Niko Munzenrieder
Date Deposited: 26 Oct 2016 12:16
Last Modified: 01 Sep 2017 21:13
URI: http://sro.sussex.ac.uk/id/eprint/65028

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