Radio frequency electronics on plastic

Ellinger, F, Ishida, K, Shabanpour, R, Meister, T, Boroujeni, B K, Carta, C, Petti, L, Salvatore, G A, Tröster, G and Münzenrieder, N (2015) Radio frequency electronics on plastic. In: Microwave and Optoelectronics Conference (IMOC), 2015 SBMO/IEEE MTT-S International, 3-6 November 2015, Porto de Galinhas.

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Abstract

In this paper the recent progress of active high frequency electronics on plastic is discussed. This technology is mechanically flexible, bendable, stretchable and does not need any rigid chips. Indium Gallium Zinc Oxide (IGZO) technology is applied. At 2 V supply and gate length of 0.5 μm, the thin-film transistors (TFTs) yield a measured transit frequency of 138 MHz. Our scalable TFT compact simulation model shows good agreement with measurements. To achieve a sufficiently high yield, TFTs with gate lengths of around 5 μm are used for the circuit design. A Cherry Hopper amplifier with 3.5 MHz bandwidth, 10 dB gain and 5 mW dc power is presented. The fully integrated receiver covering a plastic foil area of 3 × 9 mm2 includes a four stage cascode amplifier, an amplitude detector, a baseband amplifier and a filter. At a dc current of 7.2 mA and a supply of 5 V, a bandwidth of 2 - 20 MHz and a gain beyond 15 dB were measured. Finally, an outlook regarding future advancements of high frequency electronics on plastic is given.

Item Type: Conference or Workshop Item (Paper)
Additional Information: ISBN: 9781509004317
Schools and Departments: School of Engineering and Informatics > Engineering and Design
Depositing User: Niko Munzenrieder
Date Deposited: 04 Jul 2016 12:50
Last Modified: 04 Jul 2016 12:50
URI: http://sro.sussex.ac.uk/id/eprint/61870

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