Picosecond laser ranging at wavelengths up to 2.4 μm using an InAs avalanche photodiode

Butera, S, Vines, P, Tan, C H, Sandall, I and Buller, G S (2016) Picosecond laser ranging at wavelengths up to 2.4 μm using an InAs avalanche photodiode. Electronics Letters, 52 (5). pp. 385-386. ISSN 0013-5194

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Abstract

Time-of-flight measurements using pulsed laser illumination in the wavelength region between 1.3 to 2.37 μm have been demonstrated with an InAs avalanche photodiode (APD). InAs is photo-sensitive at wavelengths up to 3.5 μm and with predominantly electron multipli- cation reducing detector noise, InAs APDs have clear potential for sen- sitive optical measurements of picosecond transients in the mid-wave infrared. Laboratory-based demonstrations of time-of-flight ranging using InAs APDs operated at room temperature is described.

Item Type: Article
Schools and Departments: School of Engineering and Informatics > Engineering and Design
Subjects: Q Science > QC Physics
Depositing User: Silvia Butera
Date Deposited: 17 Mar 2017 15:26
Last Modified: 17 Mar 2017 16:11
URI: http://sro.sussex.ac.uk/id/eprint/59751

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