Electronic noise in charge sensitive preamplifiers for X-ray spectroscopy and the benefits of a SiC input JFET

Lioliou, G and Barnett, A M (2015) Electronic noise in charge sensitive preamplifiers for X-ray spectroscopy and the benefits of a SiC input JFET. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 801. pp. 63-72. ISSN 0168-9002

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Abstract

A comprehensive summary and analysis of the electronic noise affecting the resolution of X-ray, γ-ray and particle counting spectroscopic systems which employ semiconductor detectors and charge sensitive preamplifiers is presented. The noise arising from the input transistor of the preamplifier and its contribution to the total noise is examined. A model for computing the noise arising from the front-end transistor is also presented and theoretical calculations comparing the noise contribution of transistors made of different materials are discussed, emphasizing the advantages of wide bandgap transistor technology.

Item Type: Article
Schools and Departments: School of Engineering and Informatics > Engineering and Design
Subjects: Q Science > QC Physics
Depositing User: Grammatiki Lioliou
Date Deposited: 27 Jan 2016 07:42
Last Modified: 06 Mar 2017 10:49
URI: http://sro.sussex.ac.uk/id/eprint/59432

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