Flexible In-Ga-Zn-O thin-film transistors on elastomeric substrate bent to 2.3% strain

Cantarella, G., Munzenrieder, N., Petti, L., Vogt, C., Buthe, L., Salvatore, G. A., Daus, A. and Troster, Gerhard (2015) Flexible In-Ga-Zn-O thin-film transistors on elastomeric substrate bent to 2.3% strain. IEEE Electron Device Letters, 36 (8). pp. 781-783. ISSN 0741-3106

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Abstract

In this letter, a photolithographic fabrication process is used to manufacture indium–gallium–zinc–oxide thin-film transistors (TFTs) with mobilities > 10 cm ^{2} /Vs directly on a 80 \mu text{m} thick polydimethylsiloxane (PDMS) substrate. Once the fabrication is completed, the PDMS is detached from a silicon wafer used as carrier substrate. Due to the thermal mismatch between silicon and PDMS, the release results in a reduction of the PDMS area by 7.2%, which leads to the formation of out-of-plane wrinkles on the TFT surface. The reflattening of the wrinkles under tensile strain enables device functionality, while the TFTs are bent up to 2.3% strain. Mechanical stability of the TFTs with our wrinkled approach is shown by electrically characterizing them at bending radii down to 6 mm.

Item Type: Article
Schools and Departments: School of Engineering and Informatics > Engineering and Design
Depositing User: Niko Munzenrieder
Date Deposited: 03 Aug 2015 15:03
Last Modified: 03 Aug 2015 15:03
URI: http://sro.sussex.ac.uk/id/eprint/55961
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