Monte Carlo simulation of electron and proton irradiation of carbon nanotube and graphene transistors

Chatzikyriakou, Eleni, Smyrnis, Chris and Chatwin, Chris (2014) Monte Carlo simulation of electron and proton irradiation of carbon nanotube and graphene transistors. Advances in Micro Electronic Engineering, 2 (2). pp. 33-37. ISSN 2327-7599

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Abstract

Carbon-based nanotechnology electronics can provide high
performance, low-power and low-weight solutions, which
are very suitable for innovative aerospace applications.
However, its application in the space environment where
there is a radiation hazard, requires an assessment of the response of such electronic products to the background irradiance. To explore the potential of carbon-based nanotechnology, Monte Carlo simulations of radiation interacting with a gate-all-around carbon nanotube (GAACNFET) and a top-gated graphene FET are presented. Geant4 is used to calculate the energy deposited into the dielectric layers and the displacement damage in the nanosemiconductors under proton and electron irradiation. Both an unshielded and two cases with 250 μm thick NiFe and Pb shielding are tested at a fluence of 1015 m-2. The energy range of the particles considered is 10-2 – 102 MeV for the unshielded and 1 – 103 MeV for the shielded case. The results indicate that the graphene transistor is more susceptible to displacement damage than the CNT-based system

Item Type: Article
Keywords: Space Electronics; Graphene; Carbon Nanotubes; Transistors; Radiation Damage; Radiation Hardening
Schools and Departments: School of Engineering and Informatics > Engineering and Design
Subjects: Q Science
T Technology
Related URLs:
Depositing User: Chris Chatwin
Date Deposited: 01 Jul 2015 10:42
Last Modified: 07 Mar 2017 07:59
URI: http://sro.sussex.ac.uk/id/eprint/55078

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