Flexible quasi-vertical In-Ga-Zn-O thin-film transistor with 300-nm channel length

Petti, L, Frutiger, A, Munzenrieder, N, Salvatore, G A, Buthe, L, Vogt, C, Cantarella, G and Troster, G (2015) Flexible quasi-vertical In-Ga-Zn-O thin-film transistor with 300-nm channel length. IEEE Electron Device Letters, 36 (5). pp. 475-477. ISSN 0741-3106

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Abstract

In this letter, we report a flexible Indium–Gallium–Zinc-Oxide quasi-vertical thin-film transistor (QVTFT) with 300-nm channel length, fabricated on a free-standing polyimide foil, using a low-temperature process <150 °C. A bilayer lift-off process is used to structure a spacing layer with a tilted sidewall and the drain contact on top of the source electrode. The resulting quasi-vertical profile ensures a good coverage of the successive device layers. The fabricated flexible QVTFT exhibits an ON/OFF current ratio of 10^{4} , a threshold voltage of 1.5 V, a maximum transconductance of 0.73 \mu text{S}~\mu {\rm m}^{-1} , and a total gate capacitance of 76 nF \mu {\rm m}^{-1} . From S-parameter measurements, we extracted a transit frequency of 1.5 MHz. Furthermore, the flexible QVTFT is fully operational when bent to a tensile radius of 5 mm.

Item Type: Article
Schools and Departments: School of Engineering and Informatics > Engineering and Design
Depositing User: Niko Munzenrieder
Date Deposited: 08 May 2015 08:00
Last Modified: 06 Mar 2017 23:35
URI: http://sro.sussex.ac.uk/id/eprint/53918

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