Multi-qubit gate with trapped ions for microwave and laser-based implementation

Cohen, I, Weidt, S, Hensinger, W K and Retzker, A (2015) Multi-qubit gate with trapped ions for microwave and laser-based implementation. New Journal of Physics, 17. 043008. ISSN 1367-2630

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Abstract

A proposal for a phase gate and a Mølmer–Sørensen gate in the dressed state basis is presented. In order to perform the multi-qubit interaction, a strong magnetic field gradient is required to couple the phonon-bus to the qubit states. The gate is performed using resonant microwave driving fields together with either a radio-frequency (RF) driving field, or additional detuned microwave driving fields. The gate is robust to ambient magnetic field fluctuations due to an applied resonant microwave driving field. Furthermore, the gate is robust to fluctuations in the microwave Rabi frequency and is decoupled from phonon dephasing due to a resonant RF or a detuned microwave driving field. This makes this new gate an attractive candidate for the implementation of high-fidelity microwave based multi-qubit gates. The proposal can also be realized in laser-based set-ups.

Item Type: Article
Schools and Departments: School of Mathematical and Physical Sciences > Physics and Astronomy
Subjects: Q Science > QC Physics
Depositing User: Rebecca Foster
Date Deposited: 13 Apr 2015 13:08
Last Modified: 06 Mar 2017 17:57
URI: http://sro.sussex.ac.uk/id/eprint/53654

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