Flexible self-aligned double-gate IGZO TFT

Münzenrieder, N, Voser, P, Petti, L, Zysset, C, Buthe, L, Vogt, C, Salvatore, G A and Troster, G (2014) Flexible self-aligned double-gate IGZO TFT. IEEE Electron Device Letters, 35 (1). pp. 69-71. ISSN 0741-3106

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Abstract

In this letter, flexible double-gate (DG) thin-film transistors (TFTs) based on InGaZnO4 and fabricated on free standing plastic foil, using self-alignment (SA) are presented. The usage of transparent indium-tin-oxide instead of opaque metals enables SA of source-, drain-, and top-gate contacts. Hence, all layers, which can cause parasitic capacitances, are structured by SA. Compared with bottom-gate reference TFTs fabricated on the same substrate, DG TFTs exhibit a by 68% increased transconductance and a subthreshold swing as low as 109 mV/dec decade (-37%). The clockwise hysteresis of the DG TFTs is as small as 5 mV. Because of SA, the source/drain to gate overlaps are as small as ≈ 1 μm leading to parasitic overlap capacitances of 5.5 fF μm-1. Therefore a transit frequency of 5.6 MHz is measured on 7.5 μm long transistors. In addition, the flexible devices stay fully operational when bent to a tensile radius of 6 mm.

Item Type: Article
Schools and Departments: School of Engineering and Informatics > Engineering and Design
Depositing User: Niko Munzenrieder
Date Deposited: 06 Feb 2015 14:55
Last Modified: 06 Feb 2015 14:55
URI: http://sro.sussex.ac.uk/id/eprint/52841
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