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A compact a-IGZO TFT model based on MOSFET SPICE level=3 template for analog/RF circuit designs

journal contribution
posted on 2023-06-08, 19:59 authored by C Perumal, K Ishida, R Shabanpour, B K Boroujeni, L Petti, Niko Munzenrieder, G A Salvatore, C Carta, G Troster, F Ellinger
This letter presents a compact model for flexible analog/RF circuits design with amorphous indium-gallium-zinc oxide thin-film transistors (TFTs). The model is based on the MOSFET LEVEL=3 SPICE model template, where parameters are fitted to measurements for both dc and ac characteristics. The proposed TFT compact model shows good scalability of the drain current for device channel lengths ranging from 50 to 3.6 µm. The compact model is validated by comparing measurements and simulations of various TFT amplifier circuits. These include a two-stage cascode amplifier showing 10 dB of voltage gain and 2.9 MHz of bandwidth.

History

Publication status

  • Published

Journal

IEEE Electron Device Letters

ISSN

0741-3106

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Issue

11

Volume

34

Page range

1391-1393

Department affiliated with

  • Engineering and Design Publications

Full text available

  • No

Peer reviewed?

  • Yes

Legacy Posted Date

2015-02-06

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    University of Sussex (Publications)

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