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A compact a-IGZO TFT model based on MOSFET SPICE level=3 template for analog/RF circuit designs
journal contribution
posted on 2023-06-08, 19:59 authored by C Perumal, K Ishida, R Shabanpour, B K Boroujeni, L Petti, Niko Munzenrieder, G A Salvatore, C Carta, G Troster, F EllingerThis letter presents a compact model for flexible analog/RF circuits design with amorphous indium-gallium-zinc oxide thin-film transistors (TFTs). The model is based on the MOSFET LEVEL=3 SPICE model template, where parameters are fitted to measurements for both dc and ac characteristics. The proposed TFT compact model shows good scalability of the drain current for device channel lengths ranging from 50 to 3.6 µm. The compact model is validated by comparing measurements and simulations of various TFT amplifier circuits. These include a two-stage cascode amplifier showing 10 dB of voltage gain and 2.9 MHz of bandwidth.
History
Publication status
- Published
Journal
IEEE Electron Device LettersISSN
0741-3106Publisher
Institute of Electrical and Electronics Engineers (IEEE)External DOI
Issue
11Volume
34Page range
1391-1393Department affiliated with
- Engineering and Design Publications
Full text available
- No
Peer reviewed?
- Yes
Legacy Posted Date
2015-02-06Usage metrics
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