IGZO TFT-based all-enhancement operational amplifier bent to a radius of 5 mm

Zysset, C, Münzenrieder, N, Petti, L, Buthe, L, Salvatore, G A and Troster, G (2013) IGZO TFT-based all-enhancement operational amplifier bent to a radius of 5 mm. IEEE Electron Device Letters, 34 (11). pp. 1394-1396. ISSN 0741-3106

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Abstract

An all-enhancement operational amplifier operating at 5 V and comprising 16 n-type amorphous indium-gallium-zinc-oxide thin-film transistors (TFTs) is fabricated on a 50 μm thick flexible polyimide substrate. The operational amplifier has an open loop voltage gain of 18.7 dB and a unity-gain frequency of 472 kHz while the common-mode rejection ratio (CMMR) is larger than 40 dB. The mechanical flexibility of the amplifier is demonstrated by bending the circuit to a radius of 5 mm, which corresponds to a tensile strain of 0.5% parallel to the TFT channels. The bent amplifier shows the same output behavior as when flat. The power consumption of the operational amplifier is 900 μW, regardless whether the circuit is flat or bent.

Item Type: Article
Schools and Departments: School of Engineering and Informatics > Engineering and Design
Depositing User: Niko Munzenrieder
Date Deposited: 06 Feb 2015 14:46
Last Modified: 06 Feb 2015 14:46
URI: http://sro.sussex.ac.uk/id/eprint/52838
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