Complementary metal-oxide-semiconductor (CMOS) sensors for fluorescence lifetime imaging (FLIM)

Henderson, R K, Rae, B R and Li, D-U (2014) Complementary metal-oxide-semiconductor (CMOS) sensors for fluorescence lifetime imaging (FLIM). In: Durini, Daniel (ed.) High performance silicon imaging: fundamentals and applications of CMOS and CCD sensors. Elsevier, pp. 312-347.

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Abstract

This chapter begins by reviewing the theory, techniques and applications of fluorescence lifetime sensing. It then looks at existing instrumentation and the ways in which complementary metal-oxide-semiconductor (CMOS) technology has sought to complement these technologies by providing low cost, robust and miniaturised sensors with increased throughput and dynamic range. A number of pixels and sensor architectures are compared with a view to future fully-integrated, lifetime imaging systems based on CMOS sensors.

Item Type: Book Section
Schools and Departments: School of Engineering and Informatics > Engineering and Design
Subjects: Q Science > QC Physics > QC0350 Optics. Light > QC0450 Spectroscopy
T Technology > TR Photography > TR0250 Cameras
Depositing User: David Day-Uei Li
Date Deposited: 02 Feb 2015 08:19
Last Modified: 12 Feb 2015 14:25
URI: http://sro.sussex.ac.uk/id/eprint/52662
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