Fabrication and operation of a two-dimensional ion-trap lattice on a high-voltage microchip

Sterling, R C, Rattanasonti, H, Weidt, S, Lake, K, Srinivasan, P, Webster, S C, Kraft, M and Hensinger, W K (2014) Fabrication and operation of a two-dimensional ion-trap lattice on a high-voltage microchip. Nature Communications, 5. p. 3637. ISSN 2041-1723

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Abstract

Microfabricated ion traps are a major advancement towards scalable quantum computing with trapped ions. The development of more versatile ion-trap designs, in which tailored arrays of ions are positioned in two dimensions above a microfabricated surface, will lead to applications in fields as varied as quantum simulation, metrology and atom–ion interactions. Current surface ion traps often have low trap depths and high heating rates, because of the size of the voltages that can be applied to them, limiting the fidelity of quantum gates. Here we report on a fabrication process that allows for the application of very high voltages to microfabricated devices in general and use this advance to fabricate a two-dimensional ion-trap lattice on a microchip. Our microfabricated architecture allows for reliable trapping of two-dimensional ion lattices, long ion lifetimes, rudimentary shuttling between lattice sites and the ability to deterministically introduce defects into the ion lattice.

Item Type: Article
Schools and Departments: School of Mathematical and Physical Sciences > Physics and Astronomy
Subjects: Q Science > QC Physics > QC0170 Atomic physics. Constitution and properties of matter Including molecular physics, relativity, quantum theory, and solid state physics
Depositing User: Winfried Hensinger
Date Deposited: 07 Apr 2014 07:59
Last Modified: 07 Mar 2017 08:54
URI: http://sro.sussex.ac.uk/id/eprint/48138

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