Temperature dependence of the average electron-hole pair creation energy in Al0.8Ga0.2As

Barnett, A M, Lees, J E and Bassford, D J (2013) Temperature dependence of the average electron-hole pair creation energy in Al0.8Ga0.2As. Applied Physics Letters, 102 (18). p. 181119. ISSN 0003-6951

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Abstract

The temperature dependence of the average energy consumed in the creation of an electron-hole pair in the wide bandgap compound semiconductor Al 0.8Ga0.2As is reported following X-ray measurements made using an Al0.8Ga0.2As photodiode diode coupled to a low-noise charge-sensitive preamplifier operating in spectroscopic photon counting mode. The temperature dependence is reported over the range of 261 K-342 K and is found to be best represented by the equation ε AlGaAs 7.327-0.0077 T, where εAlGaAs is the average electron-hole pair creation energy in eV and T is the temperature in K. © 2013 © 2013 Author(s).

Item Type: Article
Schools and Departments: School of Engineering and Informatics > Engineering and Design
Subjects: Q Science > QB Astronomy
Q Science > QC Physics
Depositing User: Anna Barnett
Date Deposited: 13 Nov 2013 13:58
Last Modified: 22 Mar 2017 23:00
URI: http://sro.sussex.ac.uk/id/eprint/47020

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