SiC X-ray detectors for harsh environments

Lees, J E, Barnett, A M, Bassford, D J, Stevens, R C and Horsfall, A B (2011) SiC X-ray detectors for harsh environments. Journal of Instrumentation, 6. C01032. ISSN 1748-0221

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Abstract

We have characterised a number of SiC Schottky Diodes as soft X-ray photon counting detectors over the temperature range -30°C to +80°C. We present the spectroscopic performance, as measured over the energy range ~ 6 keV–30 keV and correlate the data with measurements of the temperature dependence of the device leakage current. The results show that these detectors can be used for X-ray photon counting spectroscopy over a wide temperature range. Measurement of the radiation tolerance of Semi Transparent SiC Schottky Diodes (STSSD) has shown that these devices can still operate as photon counting X-ray spectrometers after proton irradiation (total dose of 1013 cm−2, 50 MeV). We present measurements on proton irradiated STSSDs that indicate that radiation induced traps, located in the upper half of the bandgap, have reduced the mobility and concentration of charge carriers. X-ray spectra predicted using a Monte Carlo model for SiC diodes are compared with measured spectra.

Item Type: Article
Schools and Departments: School of Engineering and Informatics > Engineering and Design
Subjects: Q Science > QB Astronomy
Q Science > QC Physics
Depositing User: Anna Barnett
Date Deposited: 29 Nov 2013 12:21
Last Modified: 29 Nov 2013 12:24
URI: http://sro.sussex.ac.uk/id/eprint/47010
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