The effect of growth interruption on the properties of InGaAs/InAlAs quantum well structures

Choy, W C H, Hughes, P J, Weiss, B L, Li, E H, Hong, K and Pavlidis, D (1998) The effect of growth interruption on the properties of InGaAs/InAlAs quantum well structures. Applied Physics Letters, 72 (3). pp. 338-340. ISSN 0003-6951

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Abstract

The effect of the growth interruption time during the growth of InGaAs/InAlAs quantum well structures is shown to have a significant effect on both the interband transitions, as determined by photoreflectance, and the electrical properties of the as-grown structure. The results show that, for increasing growth interruption time, the quantum well heterointerfaces become more abrupt and the carrier mobility increases, thereby demonstrating that long interruption times are preferable for the growth of high quality rectangular quantum well structures.

Item Type: Article
Schools and Departments: School of Engineering and Informatics > Engineering and Design
Depositing User: Bernard Weiss
Date Deposited: 06 Feb 2012 21:02
Last Modified: 07 Jun 2012 09:41
URI: http://sro.sussex.ac.uk/id/eprint/29253
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