Interdiffusion induced modification of surface-acoustic-wave AlGaAs-GaAs quantum-well modulators

Choy, W C H and Weiss, B L (1998) Interdiffusion induced modification of surface-acoustic-wave AlGaAs-GaAs quantum-well modulators. IEEE Journal of Selected Topics in Quantum Electronics, 4 (4). pp. 758-764. ISSN 1077-260X

Full text not available from this repository.

Abstract

A theoretical study of short period AlGaAs-GaAs diffused quantum-well (QW) absorption modulators operated by using surface acoustic waves (SAWs) is carried out in this paper. The as-grown QW structure is optimized and interdiffusion is used to fine tune the modulation performance. The results show that a stack of QWs can be developed at the top surface of the modulator to utilize the steep potential induced by SAWs. The optimized structure can also produce a large absorption change and thus a fast modulation speed for the same modulation depth. In comparison to previous results, the required surface acoustic wave has a longer wavelength and a lower power so that the fabrication of the interdigital transducer can be simplified. In addition, the use of interdiffusion can provide an useful fine adjustment to the operating wavelength, further enhancement of the modulation depth and an improvement in chirping with the only drawback of an increased absorption loss.

Item Type: Article
Schools and Departments: School of Engineering and Informatics > Engineering and Design
Depositing User: Bernard Weiss
Date Deposited: 06 Feb 2012 20:45
Last Modified: 11 Jul 2012 12:31
URI: http://sro.sussex.ac.uk/id/eprint/27910
📧 Request an update