Ion Trap in a Semiconductor Chip

Stick, D, Hensinger, W K, Olmschenk, S, Madsen, M J, Schwab, K and Monroe, C (2006) Ion Trap in a Semiconductor Chip. Nature Physics, 2 (1). pp. 36-39. ISSN 1745-2473

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Abstract

The electromagnetic manipulation of isolated atoms has led to many advances in physics, from laser cooling and Bose–Einstein condensation of cold gases to the precise quantum control of individual atomic ions. Work on miniaturizing electromagnetic traps to the micrometre scale promises even higher levels of control and reliability. Compared with 'chip traps' for confining neutral atoms, ion traps with similar dimensions and power dissipation offer much higher confinement forces and allow unparalleled control at the single-atom level. Moreover, ion microtraps are of great interest in the development of miniature mass-spectrometer arrays, compact atomic clocks and, most notably, large-scale quantum information processors. Here we report the operation of a micrometre-scale ion trap, fabricated on a monolithic chip using semiconductor micro-electromechanical systems (MEMS) technology. We confine, laser cool and measure heating of a single 111Cd+ ion in an integrated radiofrequency trap etched from a doped gallium-arsenide heterostructure.

Item Type: Article
Additional Information: This highly-cited first realization of an integrated ion trap chip created via photolithography is a key step towards scaling ion trap quantum computing. I was the PDRA in charge, contributed many vital ideas and contributed a significant amount of work.
Schools and Departments: School of Mathematical and Physical Sciences > Physics and Astronomy
Depositing User: Winfried Hensinger
Date Deposited: 06 Feb 2012 20:43
Last Modified: 01 May 2012 10:51
URI: http://sro.sussex.ac.uk/id/eprint/27660
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