University of Sussex
Browse

File(s) not publicly available

Oxygen implantation induced interdiffusion in AlGaAs/GaAs quantum well structures

journal contribution
posted on 2023-06-08, 06:23 authored by Padraig J Hughes, Bernard L Weiss, Spirit Tlali, Howard E Jackson
The effects of low dose (10(14) ions/cm(2)) oxygen implantation on the subband structure of an AlGaAs/GaAs single quantum well is reported here using photoluminescence and photoreflectance spectroscopy. Postimplantation rapid thermal annealing at 900 degrees C up to 180 s induces compositional interdiffusion resulting in enhanced transition energy shifts and a reduction in the photoluminescence count rate. Comparisons of transition energy shifts show that the electron two to heavy-hole two transition energy is more sensitive than the ground state electron to heavy-hole transition for these annealing conditions.

History

Publication status

  • Published

Journal

Journal of Vacuum Science and Technology B

ISSN

1071-1023

Publisher

American Vacuum Society

Issue

4

Volume

15

Page range

845-848

Department affiliated with

  • Engineering and Design Publications

Full text available

  • No

Peer reviewed?

  • Yes

Legacy Posted Date

2012-02-06

Usage metrics

    University of Sussex (Publications)

    Categories

    No categories selected

    Exports

    RefWorks
    BibTeX
    Ref. manager
    Endnote
    DataCite
    NLM
    DC