File(s) not publicly available
Oxygen implantation induced interdiffusion in AlGaAs/GaAs quantum well structures
journal contribution
posted on 2023-06-08, 06:23 authored by Padraig J Hughes, Bernard L Weiss, Spirit Tlali, Howard E JacksonThe effects of low dose (10(14) ions/cm(2)) oxygen implantation on the subband structure of an AlGaAs/GaAs single quantum well is reported here using photoluminescence and photoreflectance spectroscopy. Postimplantation rapid thermal annealing at 900 degrees C up to 180 s induces compositional interdiffusion resulting in enhanced transition energy shifts and a reduction in the photoluminescence count rate. Comparisons of transition energy shifts show that the electron two to heavy-hole two transition energy is more sensitive than the ground state electron to heavy-hole transition for these annealing conditions.
History
Publication status
- Published
Journal
Journal of Vacuum Science and Technology BISSN
1071-1023Publisher
American Vacuum SocietyExternal DOI
Issue
4Volume
15Page range
845-848Department affiliated with
- Engineering and Design Publications
Full text available
- No
Peer reviewed?
- Yes
Legacy Posted Date
2012-02-06Usage metrics
Categories
No categories selectedKeywords
Licence
Exports
RefWorks
BibTeX
Ref. manager
Endnote
DataCite
NLM
DC