Hydrogen Interaction with Dislocations in Si

Ewels, C P, Leoni, S, Heggie, M I, Jemmer, P, Hernandez, E, Jones, R and Briddon, P R (2000) Hydrogen Interaction with Dislocations in Si. Physical Review Letters, 84 (4). 690 - 693. ISSN 0031-9007

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Abstract

An H plasma has a remarkable effect on dislocation mobility in silicon, reducing its activation energy to 1.2 eV. Applying density functional theory to the interactions of H and H? With the core of the 90 degrees partial dislocation in Si, we have identified a path for motion involving kink formation and migration at hydrogenated core bonds which conforms exactly to the experimentally measured activation energy

Item Type: Article
Schools and Departments: School of Life Sciences > Chemistry
Depositing User: Malcolm Heggie
Date Deposited: 06 Feb 2012 20:28
Last Modified: 07 Mar 2017 06:21
URI: http://sro.sussex.ac.uk/id/eprint/26023

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