Partial dislocations under forward bias in SiC

Savini, G, El-Barbary, A A, Heggie, M I and Öberg, Sven (2007) Partial dislocations under forward bias in SiC. In: 6th European Conference on Silicon Carbide and Related Materials, ECSCRM 2006.

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Abstract

First-principles calculations are used to investigate the partial dislocations in 4H-SiC. We have shown that the Peierls barriers are strongly dependent on the dislocation core structures. Our results have revealed that the asymmetric reconstruction does not possess midgap states while the symmetric reconstructions, characterized by dangling bond on like atoms along the dislocation line, are always electrically active. We suggested that under forward bias, the free energies of the symmetric reconstructions are dynamically lowered by continuous electron-hole transitions between the respective deep levels and valence/conduction bands.

Item Type: Conference or Workshop Item (Paper)
Schools and Departments: School of Life Sciences > Chemistry
Depositing User: Malcolm Heggie
Date Deposited: 06 Feb 2012 20:22
Last Modified: 27 Mar 2012 11:28
URI: http://sro.sussex.ac.uk/id/eprint/25610
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