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Electrical activity and migration of 90 degrees partial dislocations in SiC

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posted on 2023-06-08, 05:38 authored by G Savini, M I Heggie, S Öberg, P R Briddon
SiC p-i-n diodes exhibit an increase in the voltage drop under forward bias which has been linked with the increased mobility of partial dislocations. Through first-principles calculations, we investigated the Si(g) and C(g) core 90° partials in 4H-SiC. We showed that both dislocations can sustain the asymmetric and symmetric reconstructions along the dislocation line. The latter reconstructions are always electrically active with a half-filled metallic band and are always more likely to migrate with substantially lower activation energies. Further we have suggested that under forward bias, the 90° partials are less mobile than the 30° partial dislocations. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.

History

Publication status

  • Published

File Version

  • Published version

Journal

New Journal of Physics

Publisher

Institute of Physics

Issue

6

Volume

9

Department affiliated with

  • Chemistry Publications

Notes

GS planned the work, ran the computer simulations and interpreted the results. GS is the main and corresponding author.

Full text available

  • Yes

Peer reviewed?

  • Yes

Legacy Posted Date

2012-02-06

First Open Access (FOA) Date

2016-03-22

First Compliant Deposit (FCD) Date

2016-08-17

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