Electrical activity and migration of 90 degrees partial dislocations in SiC

Savini, G, Heggie, M I, Öberg, S, Briddon, P R and Unset (2007) Electrical activity and migration of 90 degrees partial dislocations in SiC. New Journal of Physics, 9 (6).

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Abstract

SiC p-i-n diodes exhibit an increase in the voltage drop under forward bias which has been linked with the increased mobility of partial dislocations. Through first-principles calculations, we investigated the Si(g) and C(g) core 90° partials in 4H-SiC. We showed that both dislocations can sustain the asymmetric and symmetric reconstructions along the dislocation line. The latter reconstructions are always electrically active with a half-filled metallic band and are always more likely to migrate with substantially lower activation energies. Further we have suggested that under forward bias, the 90° partials are less mobile than the 30° partial dislocations. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.

Item Type: Article
Additional Information: GS planned the work, ran the computer simulations and interpreted the results. GS is the main and corresponding author.
Schools and Departments: School of Life Sciences > Chemistry
Depositing User: Malcolm Heggie
Date Deposited: 06 Feb 2012 20:15
Last Modified: 07 Mar 2017 06:21
URI: http://sro.sussex.ac.uk/id/eprint/24987

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