Anomaly enhancement of the dislocation velocity in SiC

Savini, Gianluca, Savini, Giancarlo, Marocchi, Angela, Suarez-Martinez, Irene, Haffenden, Gemma, Heggie, Malcolm I and Öberg, Sven (2007) Anomaly enhancement of the dislocation velocity in SiC. Physica B: Condensed Matter, 401-40. pp. 62-66. ISSN 09214526

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Abstract

Under forward bias SiC p-i-n diodes exhibit an anomaly enhancement of the partial dislocation mobility. Through first-principle calculations, we have shown that Peierls barriers and electrical activities are strongly dependent on the dislocation core structures. Further we have found that solitons or antiphase defects along the dislocation line cannot explain alone the enhancement of the dislocation velocity. We have proposed a new theoretical model that can explain the enhancement of the dislocation mobility under forward bias. This model can be applied to any semiconductor materials in order to predict the behaviour under electron-hole plasma injections

Item Type: Article
Schools and Departments: School of Life Sciences > Chemistry
Depositing User: Irene Suarez Martinez
Date Deposited: 06 Feb 2012 19:27
Last Modified: 30 Nov 2012 17:03
URI: http://sro.sussex.ac.uk/id/eprint/20692
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