Semiconductor Traps for Laser-Cooled Atomic Ions and Scalable Quantum

Stick, D, Hensinger, W K, Olmschenk, S and Monroe, C (2006) Semiconductor Traps for Laser-Cooled Atomic Ions and Scalable Quantum. IEEE LEOS Newsletter, 20 (3). pp. 13-17. ISSN 1092-8081

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Abstract

The electromagnetic confinement of atomic ions has provided a useful testbed for many different applications in atomic physics, including laser cooling {1}, mass spectrometry {2}, and precision control of nearly-pure quantum states {3}. Recently, ion traps have been effectively applied to the growing field of quantum computation {4}, where the ability to isolate a single ion from its environment has made it an attractive architecture for a large-scale quantum information processor {5, 6, 7}. While many of the fundamental quantum computing building blocks have been demonstrated with trapped ions {8}, the technology for scaling to large numbers of ion quantum bits (qubits) is just beginning to develop. In this paper, we describe an important milestone on this path with the successful operation of an ion trap fabricated on an integrated gallium arsenide (GaAs) heterostructure, which could in principal scale to host a large array of ions.

Item Type: Article
Schools and Departments: School of Mathematical and Physical Sciences > Physics and Astronomy
Depositing User: Winfried Hensinger
Date Deposited: 06 Feb 2012 19:14
Last Modified: 01 May 2012 11:01
URI: http://sro.sussex.ac.uk/id/eprint/19713
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