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Evidence of energy coupling between Si nanocrystals and Er3+ in ion-implanted silica thin films

journal contribution
posted on 2023-06-07, 21:57 authored by C E Chryssou, A J Kenyon, T S Iwayama, C W Pitt, D E Hole
Silica thin films containing Si nanocrystals and Er3+ were prepared by ion implantation. Excess Si concentrations ranged from 5% to 15%; Er3+ concentration for all samples was 0.5%. Samples exhibited photoluminescence at 742 nm (attributed to Si nanocrystals), 654 nm (defects due to Er3+ implantation), and at 1.53 µm (intra-4f transitions). Photoluminescence intensity at 1.53 µm increased ten times by incorporating Si nanocrystals. Strong, broad photoluminescence at 1.53 µm was observed for ?Pump away from Er3+ absorption peaks, implying energy transfer from Si nanocrystals. Erbium fluorescence lifetime decreased from 4 ms to 1 ms when excess Si increased from 5% to 15%, suggesting that at high Si content Er3+ ions are primarily situated inside Si nanocrystals.

History

Publication status

  • Published

Journal

Applied Physics Letters

ISSN

0003-6951

Publisher

American Institute of Physics

Issue

14

Volume

75

Page range

2011-2013

ISBN

0003-6951

Department affiliated with

  • Engineering and Design Publications

Full text available

  • No

Peer reviewed?

  • Yes

Legacy Posted Date

2012-02-06

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