Micromachining of three-dimensional GaAs membrane structures using high-energy nitrogen implantation

Miao, Jianmin, Weiss, Bernard L and Hartnagel, Hans L (2003) Micromachining of three-dimensional GaAs membrane structures using high-energy nitrogen implantation. Journal of Micromechanics and Microengineering, 13 (1). pp. 35-39. ISSN 0960-1317

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Abstract

In this paper we present an alternative technology for micromachining gallium arsenide (GaAs) using deep ion implantation. Energetic nitrogen ions at 630 keV and 4 MeV have been used to implant deeply into an n-type GaAs substrate with doses of 2 x 10(14) and I x 10(15) cm(-2). After annealing at 600 degreesC, the nitrogen implanted n-GaAs top layer was converted to semi-insulating GaAs with a thickness of I mum for 630 keV and 2.5 mum for 4 MeV nitrogen ions. A pulsed electrochemical etching process has been developed to selectively remove n-GaAs and to leave the top patterned semi-insulating GaAs layer as a mechanical membrane structure. Various GaAs microstructures, such as cross-bridge, coiled and corrugated membranes, have been successfully fabricated using this micromachining technology.

Item Type: Article
Schools and Departments: School of Engineering and Informatics > Engineering and Design
Depositing User: Bernard Weiss
Date Deposited: 06 Feb 2012 18:54
Last Modified: 01 May 2012 15:22
URI: http://sro.sussex.ac.uk/id/eprint/18862
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