Planar ion trap geometry for microfabrication

Madsen, M J, Hensinger, W K, Stick, D, Rabchuk, J A and Monroe, C (2004) Planar ion trap geometry for microfabrication. Applied Physics B: Lasers and Optics, 78 (5). pp. 639-651. ISSN 0946-2171

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Abstract

We describe a novel high aspect ratio radiofrequency linear ion trap geometry that is amenable to modern microfabrication techniques. The ion trap electrode structure consists of a pair of stacked conducting cantilevers resulting in confining fields that take the form of fringe fields from parallel plate capacitors. The confining potentials are modeled both analytically and numerically. This ion trap geometry may form the basis for large scale quantum computers or parallel quadrupole mass spectrometers.

Item Type: Article
Schools and Departments: School of Mathematical and Physical Sciences > Physics and Astronomy
Depositing User: Winfried Hensinger
Date Deposited: 06 Feb 2012 18:43
Last Modified: 01 May 2012 09:51
URI: http://sro.sussex.ac.uk/id/eprint/17930
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